Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
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DOI：
10.1109/tns.2012.2223763
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发表时间：
2012-12-01
影响因子：
1.8
通讯作者：
Goldsman, N.
中科院分区：
文献类型：
--
作者：
Akturk, A.;McGarrity, J. M.;Goldsman, N.
经过多年的研发，2011年SiC功率MOSFET投入商业市场。本文介绍了在室温和 125 摄氏度下辐照的新型高功率大电流 24 A SiC 器件的 Co60 总电离剂量 (TID) 效应的结果。这些商用组件在超过 100 krad 的辐射剂量后仍保持正常运行。然而，伽马射线照射引起电流-电压和电容-电压特性的变化。具体来说，阈值电压降低，导致电流驱动增加。我们还观察到界面态密度以及输入、输出和反向传输电容随着累积剂量的增加而增加。
In 2011, after many years of research and development SiC power MOSFETs became available in the commercial marketplace. This paper presents the results of Co60 total ionizing dose (TID) effects for the new high power-high current 24 A SiC devices irradiated at room temperature and 125 degrees C. These commercially available components remained operational after a radiation dose of more than 100 krad. However, gamma ray irradiation gave rise to changes in current-voltage and capacitance-voltage characteristics. Specifically, threshold voltage decreased, resulting in increased current drive. We also observed rises in interface state densities, as well as input, output and reverse transfer capacitances with increasing accumulated doses.