In-Plane Orientation Control of C-Axis Oriented YBa 2Cu 3O 7-δ Films on MgO Substrates by BaSnO 3 Buffer Layers
In-Plane Orientation Control of C-Axis Oriented YBa 2Cu 3O 7-δ Films on MgO Substrates by BaSnO 3 Buffer Layers
复制标题
BaSnO 3 缓冲层对MgO基底上C轴取向YBa 2Cu 3O 7-δ薄膜的面内取向控制
DOI：
10.1143/jjap.38.l926
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发表时间：
1999
影响因子：
1.5
通讯作者：
S. Ohshima
中科院分区：
文献类型：
--
作者：
M. Mukaida;Y. Takano;K. Chiba;T. Moriya;M. Kusunoki;S. Ohshima
提出了一种新的BaSnO 3缓冲层，用于控制MgO衬底上YBa 2Cu 3 O 7-δ薄膜的面内取向。采用脉冲激光沉积法生长了BaSnO 3缓冲层和YBa 2Cu 3 O 7-δ薄膜。在MgO（001）衬底上生长的YBa_2Cu_3O_（7-δ）薄膜中，采用BaSnO_3缓冲层消除了45°晶界这一微波器件应用中的致命缺陷。在最佳生长温度710°C下，在MgO（001）衬底上的BaSnO 3缓冲层上生长的YBa 2Cu 3 O 7-δ薄膜比在没有BaSnO 3缓冲层的MgO（001）衬底上生长的YBa 2Cu 3 O 7-δ薄膜具有更低的表面电阻（RS）。
A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.