Nearly isotropic piezoresistive response due to charge detour conduction in nanoparticle thin films.
Nearly isotropic piezoresistive response due to charge detour conduction in nanoparticle thin films.
复制标题
由于纳米颗粒薄膜中电荷绕道传导引起的几乎各向同性压电反应。
DOI：
10.1038/srep11939
复制
发表时间：
2015-07-15
影响因子：
4.6
通讯作者：
Kuo W
中科院分区：
文献类型：
--
作者：
Jiang CW;Ni IC;Tzeng SD;Kuo W
研究了柔性聚酰亚胺衬底上纳米颗粒薄膜应变传感器的压阻响应。无序粒子间隧穿引入了电荷传导的微观绕道，从而降低了规范因子。当电流沿垂直于单向应变的方向流动时，这种无序也会导致大的电阻变化，从而降低响应的各向异性。对于实际使用，这些应变传感器的稳定性和耐久性在7个 × 10~4次弯曲循环中得到了验证。在长时间的循环弯曲下，器件会产生裂纹，并略微降低量规系数。
Piezoresistive responses of nanoparticle thin-film strain sensors on flexible polyimide substrates were studied. Disordered interparticle tunneling introduces microscopic detour of charge conduction so as to reduce gauge factors. The disorder also results in large resistance change when current flows in the direction perpendicular to a unidirectional strain, reducing response anisotropy. For practical usages, stability and endurance of these strain sensors are confirmed with 7 × 104 bending cycles. Cracks form in devices under prolonged cyclic bending and slightly reduce gauge factor.