Improving surface passivation on very thin substrates for high efficiency silicon heterojunction solar cells
Improving surface passivation on very thin substrates for high efficiency silicon heterojunction solar cells
复制标题
DOI：
10.1016/j.solmat.2020.110715
复制
发表时间：
2020-10-01
影响因子：
6.9
通讯作者：
Augusto, Andre
中科院分区：
文献类型：
--
作者：
Balaji, Pradeep;Dauksher, William J.;Augusto, Andre
硅太阳能电池现在距离理论效率极限不到3%。先进的钝化接触架构已证明表面饱和电流密度接近1 fA/cm（2）。我们通过控制沉积温度和硅烷与氢的稀释比，优化了薄的本征氢化非晶硅层。薄晶片被用作测试平台，以增加对表面钝化的灵敏度。通过优化本征层，我们降低了表面饱和电流密度从1.7 fA/cm（2）到0.6 fA/cm（2）的厚度范围在40和180 μ m之间的纹理晶片。在晶片厚度小于50 μ m的n型CZ晶片上淀积的p-i/c-Si/i-n结构上实现了760 mV以上的隐含开路电压。此外，我们通过实验证明了在40 μ m厚的独立晶片上制造丝网印刷硅异质结太阳能电池，同时实现20.48%的效率，使用非常薄的晶片的潜力。
Silicon solar cells are now less than 3% absolute from the theoretical efficiency limit. Advanced passivated contact architectures have demonstrated surface saturation current densities close to 1 fA/cm(2). We have optimized the thin intrinsic hydrogenated amorphous silicon layer by controlling the deposition temperature and the silane-to-hydrogen dilution ratio. Thin wafers were used as a testbed to increase the sensitivity to surface passivation. By optimizing the intrinsic layer, we reduced the surface saturation current densities from 1.7 fA/cm(2) to 0.6 fA/cm(2) on textured wafers with thicknesses ranging between 40 and 180 mu m. Implied open-circuit voltages over 760 mV were accomplished on p-i/c-Si/i-n structures deposited on n-type CZ wafers with wafer thicknesses below 50 mu m. Further, we demonstrated experimentally the potential of using very thin wafers by manufacturing screen-printed silicon heterojunction solar cells on 40 mu m thick standalone wafers while achieving an efficiency of 20.48%.