3d Transition Metal Adsorption Induced the valley-polarized Anomalous Hall Effect in Germanene.
3d Transition Metal Adsorption Induced the valley-polarized Anomalous Hall Effect in Germanene.
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DOI：
10.1038/srep27830
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发表时间：
2016-06-17
影响因子：
4.6
通讯作者：
Sun LZ
中科院分区：
文献类型：
--
作者：
Zhou P;Sun LZ
基于密度泛函理论（DFT）+ U和Berry曲率计算，研究了3d过渡金属（Ti ~ Co）原子吸附锗烯（TM-germanene）的电子结构和拓扑性质.发现锗烯表面吸附Cr、Mn或Co原子可实现谷极化反常霍尔效应。在它们的纳米尺度上可以容易地检测到有限谷霍尔电压，这对于谷电子器件是重要的。此外，通过改变系统的费米能，可以获得不同的谷极化电流甚至可逆的谷霍尔电压。系统的这种多功能特性在下一代电子设备中显示出潜力。
Based on DFT + U and Berry curvature calculations, we study the electronic structures and topological properties of 3d transition metal (TM) atom (from Ti to Co) adsorbed germanene (TM-germanene). We find that valley-polarized anomalous Hall effect (VAHE) can be realized in germanene by adsorbing Cr, Mn, or Co atoms on its surface. A finite valley Hall voltage can be easily detected in their nanoribbon, which is important for valleytronics devices. Moreover, different valley-polarized current and even reversible valley Hall voltage can be archived by shifting the Fermi energy of the systems. Such versatile features of the systems show potential in next generation electronics devices.