Preparation of novel SiGe-free strained Si on insulator substrates
Preparation of novel SiGe-free strained Si on insulator substrates
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绝缘体衬底上新型无 SiGe 应变硅的制备
DOI：
10.1109/soi.2002.1044480
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
E. Fitzgerald
中科院分区：
文献类型：
--
作者：
T. Langdo;Anthony Lochtefeld;M. Currie;R. Hammond;V. Yang;J. Carlin;C. Vineis;G. Braithwaite;H. Badawi;M. Bulsara;E. Fitzgerald
描述了一种新型无sige SSOI衬底技术。这种方法可以直接在绝缘体层上制造控制良好、外延明确的薄应变硅层。在这些结构中，拉伸应变水平大于1%，并且在热退火循环后不会减少。最终结构中没有应变诱导的松弛SiGe层，消除了其他SSOI解决方案固有的一些关键问题。
A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers. Tensile strain levels of greater than 1% have been demonstrated in these structures, and are not diminished after thermal anneal cycles. The strain-inducing relaxed SiGe layer is absent from the final structure, eliminating some of the key problems inherent to other SSOI solutions.