Advances in RF MEMS phase shifters from 15 GHz to 35 GHz
Advances in RF MEMS phase shifters from 15 GHz to 35 GHz
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RF MEMS 移相器从 15 GHz 到 35 GHz 的进步
DOI：
10.1109/mwsym.2012.6258286
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Andrew R. Brown
中科院分区：
文献类型：
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作者：
B. Pillans;L. Coryell;A. Malczewski;Cody Moody;F. Morris;Andrew R. Brown
这项工作报告了使用 RF MEMS 开关技术构建用于移动通信相控阵天线的低损耗移相器的进展。设计、制造、封装和测试了以 15 GHz、21 GHz、30 GHz 和 35 GHz 为中心的四个移相器。平均封装插入损耗分别为 –1.7 dB、–1.8 dB、–2.3 dB 和 –2.7 dB，所有情况下 RMS 相位误差均小于 7 度。使用创新的液晶聚合物封装技术在晶圆级封装这些部件。目前正在进行的工作正在进一步减少损失。
This work reports progress towards building low-loss phase shifters using RF MEMS switch technology for use in communication-on-the-move phased array antennas. Four phase shifters centered at 15 GHz, 21 GHz, 30 GHz and 35 GHz were designed, built, packaged and tested. The average packaged insertion losses were –1.7 dB, –1.8 dB, –2.3 dB and –2.7 dB respectively with RMS phase errors less than 7 degrees in all cases. An innovative liquid crystal polymer packaging technique was used to package these parts at the wafer level. Further reductions in loss are currently being implemented in ongoing work.