Flow pattern defects in germanium-doped Czochralski silicon crystals
Flow pattern defects in germanium-doped Czochralski silicon crystals
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DOI：
10.1007/s00339-010-6146-6
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发表时间：
2011-07
期刊：
影响因子：
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通讯作者：
Wubing Xu;Jiahe Chen;Xiangyang Ma;Deren Yang;Longfei Gong;D. Tian
中科院分区：
文献类型：
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作者：
Wubing Xu;Jiahe Chen;Xiangyang Ma;Deren Yang;Longfei Gong;D. Tian
本文研究了掺锗直拉硅单晶（GCZ）中轻、重杂质硼（B）和磷（P）的流动图形缺陷（FPD）的分布和刻蚀速率。在轻掺（B和P）直拉（CZ）Si晶体中，随着Ge浓度的增加，GCZ Si中的FPD密度降低。在重掺B的GCZ Si晶体中，FPD比重掺B的CZ Si晶体更致密，而在重掺P的GCZ Si和CZ Si晶体中则相反。Ge的掺杂可以略微提高轻掺杂直拉硅单晶的刻蚀速率。结果表明，在轻掺GCZ硅中，Ge的掺杂会消耗自由空位，形成高密度、小尺寸的空洞;而在重掺B的GCZ硅中，由于B和Ge引起的应力补偿，空位浓度增加，空洞尺寸变小，变得稀疏.
The distribution and etching rate of flow pattern defects (FPDs) in germanium- doped Czochralski (GCZ) silicon (Si) wafers with light and heavy dopants—either boron (B) or phosphorus (P)—have been investigated. In the lightly doped (both B and P) Czochralski (CZ) Si crystals, the FPD densities in GCZ Si decrease with the increase of Ge concentration. In the heavily B-doped GCZ Si crystals, the FPDs are denser compared with the heavily B-doped CZ Si, whereas the reverse is true in the heavily P-doped GCZ Si and CZ Si crystals. It is also shown that the etching rates in the lightly doped CZ Si crystals can be slightly enlarged by the Ge doping. It is proposed that, in lightly doped GCZ Si, Ge doping could consume free vacancies and thus form high-density but small-sized voids, while the stress compensation induced by B and Ge atoms could increase the vacancy concentration in heavily B-doped GCZ Si, leading to sparse and large-sized voids.