High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
复制标题
N2O 环境中氧化导致高掺杂 4H-SiC (11-20) 面上 MOSFET 的高沟道迁移率
DOI：
10.4028/www.scientific.net/msf.457-460.1429
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
Y. Kanzaki;H. Kinbara;Hajime Kosugi;J. Suda;T. Kimoto;H. Matsunami
通过在N2O环境中氧化，在4H-SiC（11-20）、（0001）和（000-1）表面制备了平面n沟道mosfet。研究了薄膜的受体浓度（7×10 15 -2×10 17 cm -3）与MOSFET性能的关系。4H-SiC (11-20) mosfet在2×10 16 cm -3掺杂下的有效沟道迁移率为70 cm 2 /Vs，在2×10 17 cm -3掺杂下的有效沟道迁移率为54 cm 2 /Vs。对短通道效应也进行了研究。
Planar n-channel MOSFETs have been fabricated on 4H-SiC (11-20), (0001) and (000-1) faces by using oxidation in N2O ambient. The relationship between the MOSFET performance and the acceptor concentration (7×10 15 -2×10 17 cm -3 ) of epilayers has been investigated. 4H-SiC (11-20) MOSFETs have shown a high effective channel mobility of 70 cm 2 /Vs at a 2×10 16 cm -3 doping, and 54 cm 2 /Vs at 2×10 17 cm -3 . Short-channel effects have been also investigated.