Small-signal amplifier based on single-layer MoS2
Small-signal amplifier based on single-layer MoS2
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DOI：
10.1063/1.4738986
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发表时间：
2012-07-23
影响因子：
4
通讯作者：
Kis, Andras
中科院分区：
文献类型：
--
作者：
Radisavljevic, Branimir;Whitwick, Michael B.;Kis, Andras
在这封信中，我们演示了基于单层二硫化钼，石墨烯的半导体模拟的模拟小信号放大器的操作。我们的器件由两个晶体管集成在同一片单层MoS 2。1.8 eV的高本征带隙允许基于MoS 2的放大器以4的室温增益工作。放大器的操作被证明为输入信号的频率高达2 kHz，保持高于1的增益。我们的工作表明，MoS 2可以有效地放大信号，它可以用于基于二维材料的先进模拟电路。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4738986]
In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738986]