Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures
Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures
复制标题
VO2/PMN-PT(111) 异质结构中的电场调制非易失性电阻开关
DOI：
10.1021/am405767q
复制
发表时间：
2014-04-09
影响因子：
9.5
通讯作者：
Wu, Wenbin
中科院分区：
文献类型：
--
作者：
Zhi, Bowen;Gao, Guanyin;Wu, Wenbin
研究了在(111)-0.68Pb(Mg1/3Nb2/3)O-3-0.32PbTiO3(PMN-PT)衬底上生长的VO2薄膜的电场调制电阻开关。室温下观察到VO2/PMN-PT(111)结构的相对电阻变化较大(10.7%)。对于具有给定极化方向的衬底，即使从异质结中去掉外加电场，也可以实现稳定的VO2薄膜的电阻态。通过适当地扫描异质结中的电场，可以获得多个阻态。这些稳定的电阻态是衬底不同的稳定残余应变态的结果，这与PMN-PT(111)衬底中铁电畴结构的重排有关。我们工作中的电场调谐电阻开关可能在新型电子器件中有潜在的应用。
The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O-3-0.32PbTiO(3) (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.