Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy
Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy
复制标题
通过扫描麦克斯韦应力显微镜表征硅纳米线的导电
DOI：
10.1063/1.1365416
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发表时间：
2001
影响因子：
4
通讯作者：
J. Itoh
中科院分区：
文献类型：
--
作者：
Hideo Fujii;T. Matsukawa;S. Kanemaru;H. Yokoyama;J. Itoh
本文报道了用扫描麦克斯韦应力显微镜（SMM）研究100 nm宽硅丝异常导电现象的实验方法。当外加电压高达50 V时，硅线表现出负电阻和磁滞特性。从SMM图像中获得的导线沿电位分布显示，迟滞特性出现后，导线接地端侧电场显著增加。电场的增加被解释为电导率的降低。电导下降的原因被认为是地端热孔的产生和捕获。
An experimental approach to investigate anomalous electrical conduction in a 100 nm width silicon wire by scanning Maxwell-stress microscopy (SMM) has been reported. The silicon wire exhibited negative resistance and hysteresis characteristics by sweeping the applied voltage up to 50 V. Potential profile along the wire obtained from the SMM images exhibited that lateral electric field significantly increased at the ground-side end of the wire after the hysteresis characteristics emerged. The field increase is interpreted as the conductivity decrease. The origin of the conductance decrease is considered to be generation and trapping of hot holes at the ground-side end.