Ultrahigh-contrast-ratio silicon Fano diode
Ultrahigh-contrast-ratio silicon Fano diode
复制标题
超高对比度硅 Fano 二极管
DOI：
10.1103/physreva.85.025806
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发表时间：
2012-02
影响因子：
2.9
通讯作者：
C.-W. Qiu
中科院分区：
文献类型：
--
作者：
W. Ding;B. Luk’yanchuk;C.-W. Qiu
我们报告了一个杰出的机制，使用两个相互作用的自由（非耦合）腔，以实现具有极高的对比度的全光硅二极管。与现有的全光二极管的例子相比，我们的单向传输的结果，从模仿法诺谐振在一个紧凑和有限的硅波导。具有任意非对称因子、谐振中心和线宽的Fano谱被明确地设计为具有两个对称谐振，这两个对称谐振可以通过两个级联的非耦合腔以有见地的方式分别实现和调谐。场定位本质上是不对称的。我们表明，如果这些双重不对称性（法诺光谱和字段本地化）的集成和控制，超高对比度硅法诺二极管完成。这一发现提供了一个有前途的途径，实现一个非常紧凑的光开关，并将法诺共振在硅光子学。
We report a distinguished mechanism of using two interaction-free (uncoupled) cavities to realize an all-optical silicon diode with an extremely high contrast ratio. In contrast to existing examples of all-optical diodes, our unidirectional transmission results from mimicking Fano resonance in a compact and finite silicon waveguide. A Fano spectrum with an arbitrary asymmetric factor, resonant center, and linewidth is explicitly designed with two symmetric resonances, which can be separately realized and tuned in an insightful manner by two cascaded uncoupled cavities. The field localizations are inherently asymmetric. We show that if these double asymmetries (Fano spectrum and field localization) are integrated and controlled, an ultrahigh-contrast-ratio silicon Fano diode is accomplished. This finding provides a promising avenue for achieving an extremely compact optical switch and incorporating Fano resonance in silicon photonics.