Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates.
Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates.
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DOI：
10.3390/nano6050088
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发表时间：
2016-05-10
期刊：
影响因子：
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通讯作者：
Yang CF
中科院分区：
文献类型：
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作者：
Wang FH;Chen KN;Hsu CM;Liu MC;Yang CF
在本研究中，采用射频磁控溅射方法，在室温（300 K）、373 K和473 K下，在玻璃和柔性聚酰亚胺（PI）衬底上沉积了ga2o3掺杂ZnO （GZO）薄膜。在找到沉积速率后，所有GZO薄膜的纳米尺度厚度约为150±10 nm，均由沉积时间控制。x射线衍射图表明，GZO薄膜不是无定形的，均表现出（002）峰，场发射扫描电镜显示仅观察到纳米级颗粒。研究了不同沉积温度和衬底对GZO薄膜结构、电学和光学性能的影响。利用x射线光电发射光谱（XPS）测定了沉积在不同基底上的GZO薄膜在化学态和电子态的元素组成，从而阐明了GZO薄膜电性能差异的机理。本研究比较了玻璃和PI衬底上GZO薄膜的Ga2p3/2和Ga2p1/2峰、Zn2p3/2和Zn2p1/2峰、Ga3d峰和O1s峰的XPS结合能谱。
In this study, Ga2O3-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p3/2 and Ga2p1/2 peaks, Zn2p3/2 and Zn2p1/2 peaks, the Ga3d peak, and O1s peaks for GZO thin films on glass and PI substrates were well compared.