Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots
Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots
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通过添加界面势垒和量子点增强固体聚合物电解质忆阻器器件的开关
DOI：
10.1145/3611315.3633275
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Gater M
中科院分区：
文献类型：
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作者：
Gater M
我们报告了单聚合物和双聚合物（聚甲基丙烯酸酯）势垒对基于聚环氧乙烷（PEO）的忆阻器的电效应。还研究了具有嵌入 WS2 量子点的有源层的单势垒器件。添加单个 PMA 势垒会产生多交叉点电流-电压滞后，而添加嵌入式量子点则消除了多交叉点行为，并在器件从低电阻状态 (LRS) 开始时显示出可重复的单极切换。该器件显示出一些可逆单极至双极操作的能力，作为所施加电压和器件休息时间的函数。添加双 PMA 势垒可在较高电压操作下产生可重复的单极开关行为和单极负微分电阻行为。
We report on the electrical effects of single and double polymer (polymethacrylate) barriers on polyethylene oxide (PEO) based memristors. The single barrier device with an active layer embedded with WS2 quantum dots is also investigated. The addition of a single PMA barrier yields multi cross point current-voltage hysteresis while the addition of embedded quantum dots removes multi-cross point behavior and shows repeatable uni-polar switching with the device starting in the low resistive state (LRS). The device shows some capability of reversible unipolar to bipolar operation as a function of applied voltage and device rest time. The addition of a double PMA barrier produces a reproducible unipolar switching behavior and a unipolar negative differential resistance behavior at higher voltage operation.