Understanding and Improving Persistent Transactions on Optane™ DC Memory
Understanding and Improving Persistent Transactions on Optane™ DC Memory
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DOI：
10.1109/ipdps47924.2020.00044
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发表时间：
2020-05
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影响因子：
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通讯作者：
P. Zardoshti;Michael F. Spear;A. Vosoughi;G. Swart
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文献类型：
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作者：
P. Zardoshti;Michael F. Spear;A. Vosoughi;G. Swart
将数据结构存储在高容量字节可寻址持久性存储器而不是DRAM或存储设备中提供了以下机会：（1）与DRAM相比降低了成本和功耗，（2）与存储相比减少了I/O操作所需的延迟和CPU资源，以及（3）允许快速恢复，因为数据结构在机器故障之后保留在存储器中。这一领域的第一个商业产品是英特尔® Optane™直连（Optane™ DC）持久内存。Optane™ DC承诺在DRAM的恒定因子内的访问时间，具有更大的容量，更低的能耗和持久性。我们提出了一个持久事务内存性能的实验评估，并探讨Optane™ DC耐久性域如何影响整体结果。考虑到两个可用的耐久性域都不能提供与DRAM竞争的性能，我们引入并仿真了一个新的耐久性域，称为PDRAM，其中存储器控制器跟踪足够的信息（并有足够的储备力量）在本文中，我们比较了这些持久性域在五种持久事务存储器的几种配置上的性能应用.我们发现了一个大的吞吐量差异，这强调了为每个应用程序和系统选择最佳耐久性域的重要性。与此同时，我们的研究结果证实了最近发布的持久事务内存算法能够扩展，并且最近对这些算法的优化导致了强大的性能，在16个线程时加速高达6倍。
Storing data structures in high-capacity byte-addressable persistent memory instead of DRAM or a storage device offers the opportunity to (1) reduce cost and power consumption compared with DRAM, (2) decrease the latency and CPU resources needed for an I/O operation compared with storage, and (3) allow for fast recovery as the data structure remains in memory after a machine failure. The first commercial offering in this space is Intel® Optane™ Direct Connect (Optane™ DC) Persistent Memory. Optane™ DC promises access time within a constant factor of DRAM, with larger capacity, lower energy consumption, and persistence. We present an experimental evaluation of persistent transactional memory performance, and explore how Optane™ DC durability domains affect the overall results. Given that neither of the two available durability domains can deliver performance competitive with DRAM, we introduce and emulate a new durability domain, called PDRAM, in which the memory controller tracks enough information (and has enough reserve power) to make DRAM behave like a persistent cache of Optane™ DC memory.In this paper we compare the performance of these durability domains on several configurations of five persistent transactional memory applications. We find a large throughput difference, which emphasizes the importance of choosing the best durability domain for each application and system. At the same time, our results confirm that recently published persistent transactional memory algorithms are able to scale, and that recent optimizations for these algorithms lead to strong performance, with speedups as high as 6× at 16 threads.