Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
复制标题
电场对硅中位错相关发光峰光谱位置的影响：斯塔克效应
DOI：
10.1063/1.2813024
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
J. Schmitz
中科院分区：
文献类型：
--
作者：
T. Mchedlidze;T. Arguirov;M. Kittler;T. Hoang;J. Holleman;J. Schmitz
硅中靠近p-n结的位错环的位错相关发光（DRL）峰的光谱位置随载流子注入水平的变化而移动。我们认为，由于二次斯塔克效应（QSE），位错点处的有效电场降低了DRL的激子跃迁能。载流子注入降低了结内建场，从而降低了结内建场。用QSE方程拟合数据得到的位移常数为0.0186 meV/（kV/cm）2。这种效应可以解释硅中DRL光谱的多样性，并可能允许对DRL进行调谐和调制以用于未来的光子应用。
Spectral positions of dislocation-related luminescence (DRL) peaks from dislocation loops located close to a p-n junction in silicon were shifted by carrier injection level. We suppose that the excitonic transition energies of DRL were reduced by an effective electric field at dislocation sites due to quadratic Stark effect (QSE). The field results from built-in junction field reduced by carrier injection. A constant of the shift, obtained from fitting of the data with QSE equation, was 0.0186 meV/(kV/cm)2. The effect can explain the diversity of DRL spectra in silicon and may allow tuning and modulation of DRL for future photonic applications.