Simulation of InGaN p–i–n double heterojunction solar cells with linearly graded layers
Simulation of InGaN p–i–n double heterojunction solar cells with linearly graded layers
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DOI：
10.1016/j.ijleo.2015.08.231
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发表时间：
2015-12
期刊：
影响因子：
3.1
通讯作者：
S. Nacer;A. Aissat
中科院分区：
文献类型：
--
作者：
S. Nacer;A. Aissat
本文对非极性InGaN双异质结太阳电池的性能进行了理论研究。在p-GaN/i-InGaN和i-InGaN/n-GaN之间的界面处插入线性渐变层被示出为去除电子和空穴传输到GaN中的势垒，并提高电池效率。采用一维有限元法对所提出的结构进行了模拟。研究了渐变层厚度对转换效率的影响。结果表明，通过选择合适的梯度层厚度，可以优化效率。模拟结果表明，当梯度层厚度为0.15 μm时，转换效率约为24%。
This paper deals with theoretical investigation of the performance of nonpolar InGaN double heterojunction solar cell. Inserting linearly graded layers at the interface between the p-GaN/i-InGaN and i-InGaN/n-GaN is shown to remove the barrier for electron and hole transport into GaN and increases the cell efficiency. The proposed structure is simulated using 1D finite element method. The influence of the graded layer thickness on the conversion efficiency is particularly investigated. The results show that the efficiency can be optimized by choosing an appropriate graded layer thickness. Simulations predict a conversion efficiency of about 24% for a graded layer thickness of 0.15 μm.