Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nanoinclusions
Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nanoinclusions
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DOI：
10.1016/j.nanoen.2016.07.002
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发表时间：
2016-09-01
期刊：
影响因子：
17.6
通讯作者：
Gupta, S. K.
中科院分区：
文献类型：
--
作者：
Ahmad, Sajid;Singh, Ajay;Gupta, S. K.
在p型硅锗合金基体中掺入金属硅化钇纳米颗粒可以提高其热电性能。在这项工作中，我们报告了一个热电的品质因数（ZT）的类似于1.81（在1100 K）在p型SiGe合金（这是类似的34%，高出较早的最佳报道ZT值）通过故意纳入金属硅化钇（YSi2）纳米夹杂物。通过与纳米Y2O3反应，在p型SiGe基体中原位形成了YSi2纳米夹杂物，
Incorporation of metallic yttrium silicide nanoparticles in p-type SiGe alloys matrix is demonstrated to enhance their thermoelectric performance. In this work, we report a thermoelectric figure-of-merit (ZT) of similar to 1.81 (at 1100 K) in p-type SiGe alloys (that is similar to 34% higher as compared to earlier best reported ZT value) by intentional incorporation of metallic yttrium silicide (YSi2) nano-inclusions. The YSi2 nanoinclusions were in-situ formed in p-type SiGe matrix by its reaction with Y2O3 nanoparticles (