Microscopic theory of the extremely nonlinear terahertz response of semiconductors
Microscopic theory of the extremely nonlinear terahertz response of semiconductors
复制标题
DOI：
10.1002/pssb.201000840
复制
发表时间：
2011-04-01
影响因子：
1.6
通讯作者：
Koch, Stephan W.
中科院分区：
文献类型：
--
作者：
Golde, Daniel;Kira, Mackillo;Koch, Stephan W.
通过数值求解扩展的半导体Bloch方程，对初始未激发的本征半导体纳米结构的极端非线性太赫兹响应进行了理论研究。带内加速和多光子带间跃迁的耦合动力学导致高次谐波产生高达几十个令人兴奋的太赫兹频率。结果表明，实际的截止频率是由带结构，而不是由激发强度。(C)2011 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
The extreme nonlinear terahertz response of initially unexcited intrinsic semiconductor nanostructures is studied theoretically by solving extended semiconductor Bloch equations numerically. The coupled dynamics of intraband acceleration and multiphoton interband transitions leads to high-harmonic generation up to several tens of the exciting terahertz frequency. It is shown that the actual cut-off frequency is determined by the band structure and not by the excitation strength. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim