Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide
Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide
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DOI：
10.1103/physrevb.99.184102
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发表时间：
2019-05-08
影响因子：
3.7
通讯作者：
Economou, Sophia E.
中科院分区：
文献类型：
--
作者：
Dong, Wenzheng;Doherty, M. W.;Economou, Sophia E.
碳化硅(SiC)基缺陷具有相干时间长、频率接近电信、光学和微波跃迁等特点，在量子通信、量子信息处理和下一代量子传感器中具有广阔的应用前景。对于这样的应用，自旋态的有效初始化是必要的。我们利用硅空位缺陷的系间交叉对自旋极化过程进行了理论描述，这种交叉是由光驱动、自旋-轨道耦合以及与振动模的相互作用共同实现的。通过使用不同的光驱，我们分析了两个自旋偏振通道。有趣的是，我们发现基态流形的不同自旋投影可以是极化的。本文有助于理解硅空位的初始化和读出，并解释了已有的一些关于碳化硅中硅空位中心的实验。
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical and microwave transitions. For such applications, the efficient initialization of the spin state is necessary. We develop a theoretical description of the spin-polarization process by using the intersystem crossing of the silicon vacancy defect, which is enabled by a combination of optical driving, spin-orbit coupling, and interaction with vibrational modes. By using distinct optical drives, we analyze two spin-polarization channels. Interestingly, we find that different spin projections of the ground state manifold can be polarized. This paper helps in understanding initialization and readout of the silicon vacancy and explains some existing experiments with the silicon vacancy center in SiC.