Growth of ZnO and device applications
Growth of ZnO and device applications
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DOI：
10.1016/j.apsusc.2004.10.109
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发表时间：
2005-05
影响因子：
6.7
通讯作者：
K. Iwata;H. Tampo;A. Yamada;P. Fons;K. Matsubara;K. Sakurai;S. Ishizuka;S. Niki
中科院分区：
文献类型：
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作者：
K. Iwata;H. Tampo;A. Yamada;P. Fons;K. Matsubara;K. Sakurai;S. Ishizuka;S. Niki
采用分子束外延（MBE）技术进行ZnO外延生长并评估生长性能。获得了迁移率为120cm2/(Vs)、载流子浓度为7×1016cm−3的本征ZnO外延层。为了研究使用这种生长技术的器件应用，我们进行了 Si 上的 ZnO、Se 的带隙工程和氮掺杂。我们发现ZnOSe具有12.7eV的大弓形参数，这是一种与Si晶格匹配的新型ZnOSSe半导体，能够将带隙从紫外光改变为红外光，以及N和Ga掺杂ZnO的共掺杂现象。
The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120cm2/(Vs) and carrier concentrations of 7×1016cm−3were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.