(Invited) Strain Engineering of Si/Ge Heterostructures on Ge-on-Si Platform
(Invited) Strain Engineering of Si/Ge Heterostructures on Ge-on-Si Platform
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（特邀）Ge-on-Si平台上Si/Ge异质结构的应变工程
DOI：
10.1149/09805.0267ecst
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Hamaya Kohei
中科院分区：
文献类型：
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作者：
Sawano Kentarou;Youya Wagatsuma;Alam Md. M;Omata Kaisei;Niikura Kenta;Shibata Shougo;Hoshi Yusuke;Yamada Michihiro;Hamaya Kohei
由于两步生长方法已经可以获得高质量的Ge-on-Si，因此允许在Ge-on-Si平台上进行具有高Ge含量的Si/Ge异质结构的应变工程。对Ge-on-Si和体Ge衬底上应变SiGe层的部分应变弛豫的初始阶段的详细研究清楚地表明，在Ge-on-Si上生长的应变SiGe显示出比在Ge衬底上更低的临界厚度。相反，它表明，这种减少的临界厚度上的Ge-on-Si可以显着增强超过Ge衬底上的衬底图案化的装置。此外，我们最近的研究，包括应变绝缘体上锗的制造和表面钝化的高效发光器件进行了综述。
Strain engineering of Si/Ge heterostructures with high Ge contents is allowed on the Ge-on-Si platform since a high quality Ge-on-Si has been available owing to the two-step growth method. Detailed studies on initial stages of the partial strain relaxation of strained SiGe layers on Ge-on-Si and bulk-Ge substrates clearly indicate that the strained SiGe grown on the Ge-on-Si reveals lower critical thickness than that on the Ge substrate. On the contrary, it is shown that this reduced critical thickness on the Ge-on-Si can be significantly enhanced beyond that on the Ge substrate by means of the substrate patterning. Additionally, recent our studies including strained Ge-on-Insulator fabrication and its surface passivation toward high-efficient light emitting devices are overviewed.