Very High Density (>10 14 cm −2 ) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures
Very High Density (>10 14 cm −2 ) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures
复制标题
在未掺杂的赝晶 InGaN/AlN 异质结构中观察到极高密度 (>10 14 cm –2 ) 极化 – 诱导二维空穴气体
DOI：
10.1002/aelm.202101120
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发表时间：
2022
影响因子：
6.2
通讯作者：
Jena, Debdeep
中科院分区：
文献类型：
--
作者：
Chaudhuri, Reet;Zhang, Zexuan;Xing, Huili Grace;Jena, Debdeep
为了提高速度和导通电流，p沟道场效应晶体管需要高的空穴密度。在最近发现的非掺杂极化诱导GaN/AlN 2D空穴气体(2DHG)的基础上，本工作证明了通过在GaN沟道中引入铟来调节异质界面上的压电极化差。经过精心的设计和外延生长，这些伪晶(In)GaN/AlN异质结在III型氮化物异质结中产生了一些最高的载流子密度-1014 cm−2，仅比≈1015 cm−2的本征晶体极限低一个数量级。这些超高密度的−/AlN 2DHG在室温下的迁移率为0.5-4 cm2V−1，并且在低温下不会冻结。在此基础上，提出了InGaN合金空穴散射的特征能级为1.0 eV。
High hole densities are desired in p‐channel field effect transistors to improve the speed and on‐currents. Building on the recently discovered undoped, polarization‐induced GaN/AlN 2D hole gas (2DHG), this work demonstrates the tuning of the piezoelectric polarization difference across the heterointerface by introducing indium in the GaN channel. Using careful design and epitaxial growths, these pseudomorphic (In)GaN/AlN heterostructures result in some of the highest carrier densities of >1014cm−2in a III‐nitride heterostructure—just an order below the intrinsic crystal limit of ≈1015cm−2. These ultra‐high density InGaN/AlN 2DHGs show room temperature mobilities of 0.5–4 cm2V−1s−1and do not freeze out at low temperatures. A characteristic alloy fluctuation energy of 1.0 eV for hole scattering in InGaN alloy is proposed based on the experiments.