Stacked substrates for high voltage applications
Stacked substrates for high voltage applications
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用于高压应用的堆叠基板
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Hans Hartung
中科院分区：
文献类型：
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作者：
Olaf Hohlfeld;R. Bayerer;Th. Hunger;Hans Hartung
介绍了一种新的模块高压绝缘方法，用多层结构解决了尖角处的高电场问题。如今，阻挡电压在1700V以上的模块是基于Si3N4或AlN衬底的。需要特别的努力来管理在陶瓷层两侧的金属层的尖锐边缘上出现的高电场。模拟表明，堆叠衬底可以显著降低产生的峰值电场。这使得更便宜的隔离解决方案，如局部放电氧化铝陶瓷，可以用来取代更昂贵的AlN或Si3N4陶瓷。讨论了陶瓷和金属化厚度以及版图设计的影响。模拟结果得到了测量结果的验证。最后强调了堆叠结构的局限性，并提出了在模块中实际使用的建议。
A new way of insulation high voltages in modules is described, solving the problem of high electric fields at sharp corners with multilayer structures. Today, modules with a blocking voltage above 1700V are based on Si3N4 or AlN substrates. Special effort is required to manage the high electric fields that occur at the sharp edges of the metal layers on both sides of the ceramic layer. Simulations show that stacking substrates can significantly reduce the peak electric fields that are generated. This allows cheaper isolation solutions such as partial discharge Al2O3 ceramics can be used to replace the more expensive AlN or Si3N4 ceramic. The Influence of ceramic and metallization thickness as well as the layout design have been discussed. The simulations have been confirmed by measurements. Finally limitations of the stacked structures are highlighted and suggestions are made for practical use in modules.