Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires
Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires
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DOI：
10.1021/acs.nanolett.6b03980
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发表时间：
2016-12-01
期刊：
影响因子：
10.8
通讯作者：
Zhu, Tongtong
中科院分区：
文献类型：
--
作者：
Puchtler, Tim J.;Wang, Tong;Zhu, Tongtong
我们展示了嵌入 GaN 纳米线侧壁的自组装 m 面 InGaN 量子点 (QD) 的单光子发射。电子显微镜、阴极发光、时间分辨微光致发光 (mu PL) 和光子自相关实验相结合，对 QD 结构和光学特性进行了全面评估。该 QD 表现出高达 100 K 的反聚束发射，在 5 K 时测得的自相关函数为 g((2))(0) = 0.28(0.03)。对统计上显着数量的 QD 的研究表明，这些 m 平面 QD 表现出非常快的辐射寿命 (260 +/- 55 ps)，表明内部场比之前报道的任何 c 平面和 a 平面 QD 更小。此外，观察到的单光子几乎完全线性偏振，垂直于晶体 c 轴，线性偏振度为 0.84 +/- 0.12。这种纳入纳米线系统的 InGaN 量子点满足了量子信息系统的许多实施要求，并有可能为全新的器件概念打开大门。
We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (mu PL), and photon autocorrelation experiments give a thorough evaluation of the QD structural and optical properties. The QD exhibits antibunched emission up to 100 K, with a measured autocorrelation function of g((2))(0) = 0.28(0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.