Epitaxial films of Heusler compound Co2FeAl0.5Si0.5 with high crystalline quality grown by off-axis sputtering
Epitaxial films of Heusler compound Co2FeAl0.5Si0.5 with high crystalline quality grown by off-axis sputtering
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DOI：
10.1063/1.4825338
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发表时间：
2013-10-14
影响因子：
4
通讯作者：
Yang, F. Y.
中科院分区：
文献类型：
--
作者：
Peters, B.;Alfonsov, A.;Yang, F. Y.
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Co2FeAl0.5Si0.5 films with a surface roughness of 0.12 nm have been grown epitaxially on lattice-matched MgAl2O4 (001) substrates by off-axis sputtering. X-ray diffraction shows pronounced Laue oscillations, rocking curves as narrow as 0.0043 degrees, and clear Co2FeAl0.5Si0.5 (111) peaks indicating L2(1) ordering. Magnetic characterizations show a clear magnetocrystalline anisotropy comprising cubic and epitaxy-induced uniaxial terms. Nuclear magnetic resonance measurements reveal L2(1) order of 81% in the Co2FeAl0.5Si0.5 films. Magnetotransport measurements show a distinct separation of anisotropic magnetoresistance and ordinary magnetoresistance. These results demonstrate the state-of-the-art crystalline quality and magnetic uniformity of the Co2FeAl0.5Si0.5 films. (C) 2013 AIP Publishing LLC.