Room-temperature ultraviolet nanowire nanolasers
Room-temperature ultraviolet nanowire nanolasers
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DOI：
10.1126/science.1060367
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发表时间：
2001-06-08
期刊：
影响因子：
56.9
通讯作者：
Yang, PD
中科院分区：
文献类型：
--
作者：
Huang, MH;Mao, S;Yang, PD
半导体纳米线阵列中的室温紫外激光已被证实。采用简单的气相传输冷凝法在蓝宝石衬底上生长了自组织、定向生长的氧化锌纳米线。这些宽带隙半导体纳米线形成直径从20到150纳米变化的天然激光腔，并且LcM高达10微米。在光激发下，在385纳米处观察到表面发射激光作用，发射线宽小于0.3纳米。纳米线的化学灵活性和一维性使其成为理想的小型化激光光源。这些短波长纳米激光可以有无数的应用，包括光学计算、信息存储和微观分析。
Room-temperature ultraviolet Lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.