Zener tunneling between Landau levels in a double quantum well at high filling factors
Zener tunneling between Landau levels in a double quantum well at high filling factors
复制标题
高填充因子双量子阱中朗道能级之间的齐纳隧穿
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Bykov
中科院分区：
文献类型：
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作者：
A. Bykov
在温度4.2 K，磁场B < 2 T的条件下，研究了具有两个尺寸量子化子带的GaAs双量子阱中的微分电阻rxx。在高填充因子下的Idc存在下，在调查中的电子系统中发现了由直流偏置电流Idc的值确定的反向磁场中的周期的振荡rxx。磁子带间振荡的振幅已被证明是增加在rxx振荡的最大值，而振荡反转已被观察到的最小值。所发现的振荡已被证明是由于齐纳隧道之间的朗道水平倾斜的霍尔电场的电子。实验数据定性地解释的影响上的IDC依赖的电子分布函数的分量的子带间跃迁。
Differential resistance rxx in a double GaAs quantum well with two occupied size-quantization subbands has been studied at a temperature of 4.2 K in magnetic fields B < 2 T. The oscillations of rxx with a period in the inverse magnetic field determined by the value of a dc bias current Idc have been discovered in the electron system under investigation at high filling factors in the presence of Idc. The amplitude of magneto-intersubband oscillations has been shown to increase in the rxx oscillation maxima, while the oscillation reversal has been observed in the minima. The discovered oscillations have been shown to be due to Zener tunneling of electrons between Landau levels tilted by a Hall electric field. The experimental data are qualitatively explained by the effect of intersubband transitions on the Idc-dependent component of the electron distribution function.