Interlayer Exciton Diode and Transistor
Interlayer Exciton Diode and Transistor
复制标题
DOI：
10.1021/acs.nanolett.2c01905
复制
发表时间：
2022-08-24
期刊：
影响因子：
10.8
通讯作者：
Schaibley, John R.
中科院分区：
文献类型：
--
作者：
Shanks, Daniel N.;Mahdikhanysarvejahany, Fateme;Schaibley, John R.
控制电荷中性层间激子（IX）准粒子的流动可以潜在地导致低损耗激子电路。在这里，我们报告单向运输IX沿着纳米级静电定义的通道中的MoSe 2-WSe 2异质结构。这些结果是通过在石墨烯栅极中光刻定义的三角形蚀刻来实现的，以创建势能“幻灯片”。通过进行空间和时间分辨的光致发光测量，我们测量平滑变化的IX能量沿着的结构和高速激子流的漂移速度高达2 × 10（6）厘米/秒，一个数量级大于以前的实验。此外，激子流可以通过使用第二激光脉冲饱和沟道中的激子群体来控制，从而展示了光学选通激子晶体管。我们的工作为低损耗激子电路，一维通道中玻色子输运的研究以及货车德瓦尔斯异质结构中激子的自定义势能景观铺平了道路。
Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe2-WSe2 heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy "slide ". By performing spatially and temporally resolved photo-luminescence measurements, we measure smoothly varying IX energy along the structure and high speed exciton flow with a drift velocity up to 2 x 10(6 )cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way toward low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures.