Thin multiplication region InAlAs homojunction avalanche photodiodes
Thin multiplication region InAlAs homojunction avalanche photodiodes
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DOI：
10.1063/1.122000
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发表时间：
1998-08-10
影响因子：
4
通讯作者：
Streetman, BG
中科院分区：
文献类型：
--
作者：
Lenox, C;Yuan, P;Streetman, BG
雪崩光电探测器（APD）中的低过量噪声是提高灵敏度和高频性能所需的。测量了用分子束外延技术在InP衬底上生长的具有不同i区宽度的InAlAs p-i-n同质结APD的增益和噪声特性。通过噪声测量确定的结果显示，对于1600-200 nm的倍增区厚度，倍增区宽度的依赖性从0.31减小到0.18。这一趋势遵循先前在AlGaAs基APD中显示的结果，其表现出由于非局部倍增效应而降低的过量噪声。这些结果表明，这种效应是薄雪崩区的特征，而不是特定于材料的现象。(C)1998年美国物理学会。[S0003-6951（98）00332-5]。
Low excess noise in avalanche photodetectors (APDs) is desired for improved sensitivity and high-frequency performance. Gain and noise characteristics an measured for InAlAs p-i-n homojunction APDs that were grown with varying i-region widths on InP by molecular beam epitaxy, The effective ionization ratio k (beta/alpha.) determined by noise measurements shows a dependence oil multiplication region width, reducing from 0.31 to 0.18 for multiplication region thicknesses of 1600-200 nm. This trend follows previously shown results in AlGaAs-based APDs, which exhibit reduced excess noise due to nonlocal multiplication effects. These results show that this effect is a characteristic of thin avalanche regions and is not a material-specific phenomenon. (C) 1998 American Institute of Physics. [S0003-6951 (98)00332-5].