Optimization of Performance and Reliability in 3D NAND Flash Memory
Optimization of Performance and Reliability in 3D NAND Flash Memory
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3D NAND 闪存性能和可靠性优化
DOI：
10.1109/led.2020.2987087
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发表时间：
2020
影响因子：
4.9
通讯作者：
Z. Huo
中科院分区：
文献类型：
--
作者：
Yingjie Ouyang;Zhiliang Xia;Tao Yang;Dandan Shi;Wenxi Zhou;Z. Huo
多种技术对高存储容量的3D NAND Flash需求量很大，同时要求高性能和良好的可靠性。因此，提出通过改变基于SiO2/SiOxNy/SiO2结构的隧道层中靠近多晶硅沟道的第一SiO2(O1)层厚度来调整隧道层。找到了O1层的最佳厚度。在最佳条件下，与没有沉积O1层相比，编程速度提高了19%，虽然擦除速度略有下降约7%，但初始阈值电压漂移得到了很大改善。实验结果表明，介电常数、带垒和等效氧化物厚度的影响存在复杂的机制。 O1 层的优化有助于理解编程/擦除速度和保留特性。
3D NAND Flash with high storage capacity is in great demand for several technologies, which requires high performance and good reliability at the same time. Therefore, it is proposed to adjust the tunnel layer by changing the first SiO2 (O1) layer thickness near poly Si channel in the tunnel layer based on SiO2/SiOxNy/SiO2 structure. The optimal thickness of O1 layer is found. Under the optimal condition, program speed increased by 19% compared with no O1 layer deposition, though erase speed is slightly decreased by about 7%, the initial threshold voltage shift is improved greatly. Experimental results demonstrate that there are complex mechanisms affected by the dielectric constant, band barrier and equivalent oxide thickness. The optimization of O1 layer is useful towards an understanding of program/erase speed and retention characteristics.