Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
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DOI：
10.1063/1.2720712
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发表时间：
2007-04
影响因子：
4
通讯作者：
R. Mcclintock;J. Pau;K. Minder;C. Bayram;P. Kung;M. Razeghi
中科院分区：
文献类型：
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作者：
R. Mcclintock;J. Pau;K. Minder;C. Bayram;P. Kung;M. Razeghi
在AlN模板上制作了雪崩p-i-n光电二极管用于背照明。测试了具有不同本征层厚度的结构。由击穿电压随厚度的变化估算出临界电场为2.73 mV/cm。根据器件在前后光照下的响应以及随后在结中选择性地注入空穴和电子，得到了GaN的电离系数。发现空穴电离系数高于理论预测的电子电离系数。还计算了背光和前光的过剩倍增噪声因子，并表明电子注入对噪声的贡献更大。
Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73MV∕cm was estimated from the variation of the breakdown voltage with thickness. From the device response under back and front illumination and the consequent selective injection of holes and electrons in the junction, ionization coefficients were obtained for GaN. The hole ionization coefficient was found to be higher than the electron ionization coefficient as predicted by theory. Excess multiplication noise factors were also calculated for back and front illumination, and indicated a higher noise contribution for electron injection.