Sputtered W–N diffusion barriers
Sputtered W–N diffusion barriers
复制标题
溅射 W-N 扩散势垒
DOI：
10.1116/1.572901
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
M. Nicolet
中科院分区：
文献类型：
--
作者：
H. Kattelus;E. Kolawa;K. Affolter;M. Nicolet
研究了反应溅射钨氮合金薄膜作为硅接触金属化扩散阻挡层的热稳定性。W-N势垒的组成在包括纯W的宽范围内变化。铝、金和银用作低电阻率覆盖层。研究了在500至900 °C温度范围内的冶金相互作用。将氮转化为钨有利地稳定了所有三个系统。整体故障发生迅速高于临界温度，这取决于金属覆盖层和微观结构的屏障。在某些情况下，W-N合金可以在高达800 °C的温度下有效地防止相互扩散30分钟。
The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W–N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 °C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W–N alloys can effectively prevent interdiffusion at temperatures as high as 800 °C for 30 min.