Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation
Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation
复制标题
通过增强光吸收和界面载流子分离增强二维 MoS2/CsPbBr3 光电探测器
DOI：
10.1021/acsami.7b14745
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发表时间：
2018-01-24
影响因子：
9.5
通讯作者：
Zeng, Haibo
中科院分区：
文献类型：
--
作者：
Song, Xiufeng;Liu, Xuhai;Zeng, Haibo
过渡金属二硫属化合物（TMDs）由于其特殊的结构和优异的性能而成为柔性光电子器件的理想材料，但其掺杂层的低光吸收限制了光生载流子的产生，从而限制了器件的性能。在这里，我们将全无机钙钛矿CsPbBr 3纳米片与MoS 2原子层集成在一起，并利用钙钛矿的大吸收系数和高量子效率，实现了基于TMD的光电探测器的优异性能。值得注意的是，从CsPbBr 3到MoS 2层的界面电荷转移已经通过观察到的混合MOS 2/CsPbBr 3的光致发光猝灭和缩短的衰减时间来证明。结果表明，由于MoS_2和CsPbBr_3界面处的高效光激励载流子分离，这种混合型MoS_2/CsPbBr_3光电探测器表现出4.4A/W的高光响应度、302%的外量子效率和2.5 × 10 ~（10）琼斯的探测率。该混合器件的光响应度与没有CsPbBr 3的MoS 2器件相比提高了3个数量级。与MoS 2层耦合后，器件的响应时间也从65.2 ms缩短到0.72 ms。具有高光子吸收的全无机钙钛矿层和载流子传输TMD层的组合可以为新型高性能光电器件铺平道路。
Transition Metal dichalcogenides (TMDs) are promising candidates for flexible optoelectronic devices because-of their special structures and;excellent properties, but the low optical absorption of the ultrathin layers greatly limits the generation of photocarriers and restricts the performance. Here, we integrate all-inorganic perovskite CsPbBr3 nand sheets with MoS2 atomic layers and take the advantage of the large absorption coefficient and high quantum efficiency of the perovskites, to achieve excellent performance of the TMD-based photodetectors. Significantly, the interfacial charge transfer from the: CsPbBr3 to the MoS2, layer has been evidenced by the observed photoluminescence quenching and shortened decay time of the hybrid MOS2/CsPbBr3. Resultantly, such a hybrid MoS2/CsPbBr3 photodetector exhibits a high photoresponsivity of 4.4 A/W, an external quantum efficiency of 302%, and a detectivity of 2.5 X 10(10) Jones because of the,high efficient photoexeited carrier separation at the interface of MoS2 and CsPbBr3. The photoresponsivity of this hybrid device presents an improvement of 3 orders of magnitude compared with that of a MoS2 device without CsPbBr3. The response time of the device is also shortened from 65.2 to 0.72 ms after coupling with MoS2 layers. The combination of the all-inorganic perovskite layer with high photon absorption and the carrier transport TMD layer may pave the way for novel high-performance optoelectronic devices.