Detection and stability of nanoscale space charges in local oxidation nanolithography
Detection and stability of nanoscale space charges in local oxidation nanolithography
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DOI：
10.1088/0957-4484/23/9/095707
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发表时间：
2012-03-09
期刊：
影响因子：
3.5
通讯作者：
Graaf, H.
中科院分区：
文献类型：
--
作者：
Baumgaertel, T.;v Borczyskowski, C.;Graaf, H.
我们报告的稳定性的空间电荷内的纳米氧化硅图案所产生的原子力显微镜尖端诱导局部阳极氧化的烷基封端的硅。这些结构的表面电位进行了研究，使用两种不同的方法：开尔文探针力显微镜和吸附的电荷敏感染料分子的光谱。这两种技术都证明，至少在几天内，空间电荷本身没有衰变。用Kelvin探针法测得的表面电位的明显下降是已知的，受环境湿度的影响。它被认为是由通过形成水层的屏蔽效应引起的。这是证实了我们的调查的表面电位降低动力学，这可以很好地拟合与适应模型的水冷凝。电荷敏感染料二-4-ANEPPS，这是适用于结构的荧光，显示出约270毫电子伏的光谱位移相比，不带电的氧化硅表面。高稳定性的电荷支持使用局部阳极氧化模式作为模板选择性固定阳离子物种。
We report on the stability of space charges within nanoscale silicon oxide patterns generated by atomic force microscope tip-induced local anodic oxidation of alkyl-terminated silicon. Surface potentials of these structures are investigated using two different approaches: Kelvin probe force microscopy and the spectroscopy of adsorbed charge-sensitive dye molecules. Both techniques prove that there is no decay of the space charge itself at least for several days. The apparent decrease of the surface potential measured with the Kelvin probe method is known to be influenced by the ambient humidity. It is supposed to be caused by a screening effect through the formation of a water layer. This is confirmed by our investigation of the surface potential decrease kinetics, which could be well fitted with an adapted model of water condensation. The fluorescence of the charge-sensitive dye di-4-ANEPPS, which is applied to the structures, shows a spectral shift of about 270 meV compared to an uncharged silicon oxide surface. The high stability of the charges supports the use of local anodic oxidation patterns as templates for selective immobilization of cationic species.