Understanding individual defects in CdTe thin-film solar cells via STEM: From atomic structure to electrical activity
Understanding individual defects in CdTe thin-film solar cells via STEM: From atomic structure to electrical activity
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DOI：
10.1016/j.mssp.2016.06.017
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发表时间：
2017-07
影响因子：
4.1
通讯作者：
Chen Li;J. Poplawsky;Yanfa Yan;S. Pennycook
中科院分区：
文献类型：
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作者：
Chen Li;J. Poplawsky;Yanfa Yan;S. Pennycook
在这里，我们回顾了CdTe太阳能电池中的一系列缺陷的结构-性能相关性的系统研究。各种实验方法，包括像差校正扫描透射电子显微镜，电子能量损失谱，能量色散X射线光谱，和电子束诱导电流已与密度泛函理论相结合。本研究追踪个别缺陷的结构和电活动之间的联系，包括晶粒内的部分位错，晶界和CdTe/CdS界面。对结构-性质相关性的物理起源的解释提供了见解，应该进一步发展未来的CdTe太阳能电池。
Here we review a systematic study of the structure-property correlations of a series of defects in CdTe solar cells. A variety of experimental methods, including aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, energy dispersive X-ray spectroscopy, and electron-beam-induced current have been combined with density-functional theory. The research traces the connections between the structures and electrical activities of individual defects including intra-grain partial dislocations, grain boundaries and the CdTe/CdS interface. The interpretations of the physical origin underlying the structure-property correlation provide insights that should further the development of future CdTe solar cells.