Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN
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过生长条件对横向外延生长a面GaN光学性能的影响
DOI：
10.1002/pssc.200983573
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Badcock T
中科院分区：
文献类型：
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作者：
Badcock T
我们利用光致发光和空间分辨阴极发光光谱研究了横向外延过度生长的非极性平面 GaN 的光学特性。尽管相对于平面模板，扩展缺陷的密度降低，但在低 V:III 比例 (57) 过度生长的材料中，低温发射光谱非常弱，并且主要由以 2.92 和 2.25 eV 为中心的杂质带主导。在随后以更高的 V:III 比率 (260) 过度生长时，近带边缘发射的强度增加了许多数量级，并且看到了供体-受体对带。我们认为，光学特性的显着改变与采用不同 V:III 比例时的杂质或点缺陷掺入率有关。 （© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We investigate the optical properties of lateral epitaxially overgrown non‐polara‐plane GaN using photoluminescence and spatially resolved cathodoluminescence spectroscopy. Despite the decreased density of extended defects relative toa‐plane templates, in material overgrown at a low V:III ratio (57), the low temperature emission spectrum is very weak and is dominated by impurity bands centred at 2.92 and 2.25 eV. On subsequent overgrowth at a higher V:III ratio (260), the intensity of the near band edge emission increases by many orders of magnitude and a donor‐acceptor pair band is seen. We suggest that the dramatic modification of the optical properties is related to the impurity or point‐defect incorporation rate at the different V:III ratios employed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)