Nucleation and growth process of dislocation loops in electron-irradiated β-Nb-3·1 wt% Zr alloy

Nucleation and growth process of dislocation loops in electron-irradiated β-Nb-3·1 wt% Zr alloy
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电子辐照β-Nb-3·1 wt% Zr合金中位错环的形核和生长过程

DOI:
10.1080/01418618308244310
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发表时间:
1983
影响因子:
1.6
通讯作者:
S. Kitajima
S. Kitajima
中科院分区:
材料科学3区
文献类型:
--
作者:
K. Nakai;C. Kinoshita;Yohji Muroo;S. Kitajima

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摘要 为了了解含少量杂质的β-Nb-3·1 wt% Zr中点缺陷的动力学行为,在高压电子显微镜下研究了电子辐照过程中位错环的成核和生长过程。在 300 至 675 K 的温度下进行辐照时,会形成具有填隙特征的小位错环。环的密度在辐照开始时饱和,并且环的增长与辐照时间的立方根成正比。固定电子通量下饱和环路密度的温度依赖性由五个阶段组成。这些结果以及环密度对电子通量的依赖性,从杂质对环成核过程和点缺陷迁移率的影响进行了分析。两种杂质,可能是氧和氮,充当环的成核位点。 Nb 间隙原子和这些杂质之间的结合能估计为 (1·1 ± 0·1) ×...
Abstract In order to understand the kinetic behaviour of point defects in β-Nb-3·1 wt% Zr containing small amounts of impurities, the nucleation and growth process of dislocation loops has been examined during electron irradiation in a high-voltage electron microscope. Small dislocation loops of interstitial character are formed during irradiation at temperatures from 300 to 675 K. The density of loops saturates at the beginning of irradiation, and loops grow in proportion to the cube root of irradiation time. The temperature dependence of the saturated loop density under a fixed electron flux consists of five stages. These results, together with the dependence of loop density on electron flux, are analysed in terms of the effect of impurities on the nucleation process of loops and the mobility of point defects. Two kinds of impurity, probably oxygen and nitrogen, act as nucleation sites of loops. The binding energies between a Nb interstitial and each of these impurities are estimated to be (1·1 ± 0·1) ×...