Improved performance of Si-based spiral inductors
Improved performance of Si-based spiral inductors
复制标题
提高硅基螺旋电感器的性能
DOI：
10.1109/lmwc.2004.834552
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发表时间：
2004
影响因子：
3
通讯作者：
Chin
中科院分区：
文献类型：
--
作者：
Tung;J.D.;Chih;Chin
由于基板损耗，硅晶圆上的传统螺旋电感器的品质 (Q) 因数较低。在这项工作中，采用了一种结合优化屏蔽多晶硅和质子注入处理的技术来提高电感器 Q 值。优化的多晶硅和质子轰击基板分别使电感器的 Q 值增加了 37% 和 54%。如果将两种技术结合起来，则可以实现高达 4nH 螺旋电感器 122% 的 Q 值增量。这两种手段的结合使他们个人的贡献成倍增加，而不是相加。这项工作中使用的技术将成为在硅基射频集成电路应用中将电感器放置在硅衬底上并具有令人满意的性能的关键措施。
Conventional spiral inductors on silicon wafer have suffered low quality (Q) factor due to substrate loss. In this work, a technique that combines optimized shielding poly and proton implantation treatment is utilized to improve inductor Q-value. The optimized poly-silicon and proton-bombarded substrate have added 37% and 54% increment to the Q-value of inductors, respectively. If two techniques are combined, a phenomenal Q-value increment as high as 122% of 4-nH spiral inductors can be realized. The combination of the two means has created a multiplication of their individual contribution rather than addition. The technique used in this work shall become a critical measure to put inductors on silicon substrate with satisfactory performance for Si-based radio frequency integrated circuit applications.