Mechanism of Neel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging
Mechanism of Neel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging
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DOI：
10.1103/physrevlett.123.177201
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发表时间：
2019-10-24
影响因子：
8.6
通讯作者：
Klaeui, M.
中科院分区：
文献类型：
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作者：
Baldrati, L.;Gomonay, O.;Klaeui, M.
我们通过电自旋霍尔磁电阻测量和直接成像来探测绝缘反铁磁-重金属系统的电流感应磁开关，确定由畴壁（DW）运动发生的反转。我们观察到，通过应用电流脉冲，三分之一以上的反铁磁畴发生了开关。我们的数据揭示了导致有效开关的两种不同的磁开关机制，即自旋电流诱导的有效磁各向异性变化和自旋扭矩对DWs的作用。
We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.