Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes
Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes
复制标题
高应变锗发光二极管的应变诱导电致发光增强
DOI：
10.1021/acsphotonics.8b01553
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发表时间：
2019-04-01
期刊：
影响因子：
7
通讯作者：
Sun, Junqiang
中科院分区：
文献类型：
--
作者：
Jiang, Jialin;Xue, Muyu;Sun, Junqiang
The full exploration of Si-based photonic integrated circuits is limited by the lack of an efficient light source that is compatible with the complementary metal-oxide-semiconductor process. Highly strained germanium (Ge) is a promising solution, as its band structure can be fundamentally altered by introducing tensile strain. However, the main challenge lies in the incorporation of an electrical structure while maintaining high strain with uniform distribution in the active region. Here we present highly strained Ge LEDs driven by lateral p-i-n junctions and report the strain-induced enhancement of electroluminescence (EL) from Ge. Raman characterization shows that 1.76% strain along the < 100 > direction with relatively uniform strain distribution is achieved. The observed strain-induced red-shifts of EL spectra agree well with the theoretical prediction, revealing that the direct band gap of Ge can be tuned in the range of 0.785 eV (1580 nm) to 0.658 eV (1885 nm). This work offers a pathway toward a strained Ge laser with low threshold current, as well as opens possibilities for new types of optoelectronics devices based on strain engineering.
