Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials
Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials
复制标题
与注入引起的过量空位和间隙有关的硅中掺杂剂扩散的延迟和增强
DOI：
10.1063/1.338026
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发表时间：
1987
影响因子：
3.2
通讯作者：
U. Winter
中科院分区：
文献类型：
--
作者：
M. Servidori;R. Angelucci;F. Cembali;P. Negrini;S. Solmi;P. Zaumseil;U. Winter
在700 ° C和900 °C之间退火后，研究了硅离子注入引起的晶格缺陷对B、P、As和Sb扩散率的影响。未掺杂样品中残留注入缺陷的性质和深度位置通过分析三重晶体X射线衍射和透射电子显微镜获得的摇摆曲线来确定。特别地，除了原始非晶-晶体界面下方的间隙位错环和簇之外，非晶化硅的外延再生长留下了富含空位的表面层和富含金属的更深区域。这些区域对应于缺陷产生的Monte Carlo模拟预见多余点缺陷的那些区域。相应地，当掺杂剂位于与空位或间隙团簇相对应的位置时，观察到不同的异常扩散行为。在深的区域，其中间隙过剩是存在的，B和P显示出显着的增强扩散，而只有一个小的增强表现出由As和Sb。相反，延迟扩散B和轻增强As和Sb中观察到的表面层。这些不同的趋势是一致的不同接受的贡献的空位和杂质的扩散机制的研究dopants.The影响的晶格缺陷引起的硅离子注入对B，P，As，和Sb的扩散率进行了研究退火后在700和900 °C之间。未掺杂样品中残留注入缺陷的性质和深度位置通过分析三重晶体X射线衍射和透射电子显微镜获得的摇摆曲线来确定。特别地，除了原始非晶-晶体界面下方的间隙位错环和簇之外，非晶化硅的外延再生长留下了富含空位的表面层和富含金属的更深区域。这些区域对应于缺陷产生的蒙特卡罗模拟预见到多余点缺陷的区域。相应地，当掺杂剂位于与空位或间隙团簇相对应的位置时，观察到不同的异常扩散行为。在存在间隙过剩的深部区域，B和P显示出显著的增强扩散，而只有B和P的扩散增强。
The influence of the lattice defects induced by silicon‐ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple‐crystal x‐ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous‐crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy‐rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only a small enhancement is exhibited by As and Sb. On the contrary, retarded diffusivity for B and light enhancement for As and Sb are observed in the surface layer. These different trends are consistent with the different accepted contributions of vacancies and interstitials to the diffusion mechanisms of the investigated dopants.The influence of the lattice defects induced by silicon‐ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple‐crystal x‐ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous‐crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy‐rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only...