A three-terminal SOI gated varactor for RF applications
A three-terminal SOI gated varactor for RF applications
复制标题
DOI：
10.1109/16.902729
复制
发表时间：
2001-02
影响因子：
3.1
通讯作者：
K. Shen;F. Hui;W. Wong;Zhiheng Chen;J. Lau;P. Chan;P. Ko
中科院分区：
文献类型：
--
作者：
K. Shen;F. Hui;W. Wong;Zhiheng Chen;J. Lau;P. Chan;P. Ko
本文介绍了一种用于 RF IC 的新型 CMOS 兼容 SOI 门控变容二极管。凭借其附加的第三个端子，该器件提供了异常大的调谐范围和良好的品质因数。变容二极管结构的 MEDICI 模拟结果已通过测量数据得到证实。还报道了一种可以潜在地利用三端特性的 VCO 电路。
This paper presents a new CMOS compatible SOI gated varactor for use in RF ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploit the three-terminal property is also reported.