Enhancing Thermoelectric Performance in P-Type Sb2 Te3 -Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect.
Enhancing Thermoelectric Performance in P-Type Sb2 Te3 -Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect.
复制标题
DOI：
10.1002/smll.202307798
复制
发表时间：
2023-11
期刊：
影响因子：
13.3
通讯作者：
Wenwei Yang;Wenkai Le;Jingyi Lyu;Jingfeng Li;Zhixing Chen;Qian Zhang;Shenghua Liu;Xiang-Guo Li;Jing Shuai
中科院分区：
文献类型：
--
作者：
Wenwei Yang;Wenkai Le;Jingyi Lyu;Jingfeng Li;Zhixing Chen;Qian Zhang;Shenghua Liu;Xiang-Guo Li;Jing Shuai
P型SB2Te3被认为是一种在中低温区具有潜在应用前景的热电材料。然而，其固有的高载流子浓度和晶格热导率导致了相对较低的ZT值，特别是在室温附近。本研究通过利用高能球磨和快速热压技术来显著提高SB2Te3的Seebeck系数和功率因数，从而解决了这些限制，由于施主效应，在323K时得到了显著的ZT值0.55。此外，Nb-─-Ag共掺杂的引入增加了空穴浓度，有效地抑制了本征激发态≈-548K，同时保持了良好的功率因数。同时，掺杂可以显著降低晶格的热导率。因此，SB2Te3基材料的ZT值在323K时达到了令人印象深刻的0.5-0.6的范围，与以前的研究相比几乎提高了100%。在323-573K温度范围内，Sb1.97Nb0.03Ag0.005Te3的ZT值上升到0.92，ZTavg达到0.75。这些研究成果对提高V-VI中低温度商业化材料的可行性具有重要意义。
P-type Sb2 Te3 has been recognized as a potential thermoelectric material for applications in low-medium temperature ranges. However, its inherent high carrier concentration and lattice thermal conductivity led to a relatively low ZT value, particularly around room temperature. This study addresses these limitations by leveraging high-energy ball milling and rapid hot-pressing techniques to substantially enhance the Seebeck coefficient and power factor of Sb2 Te3 , yielding a remarkable ZT value of 0.55 at 323 K due to the donor-like effect. Furthermore, the incorporation of Nb─Ag co-doping increases hole concentration, effectively suppressing intrinsic excitations ≈548 K while maintaining the favorable power factor. Simultaneously, the lattice thermal conductivity can be significantly reduced upon doping. As a result, the ZT values of Sb2 Te3 -based materials attain an impressive range of 0.5-0.6 at 323 K, representing an almost 100% improvement compared to previous research endeavors. Finally, the ZT value of Sb1.97 Nb0.03 Ag0.005 Te3 escalates to 0.92 at 548 K with a record average ZT value (ZTavg ) of 0.75 within the temperature range of 323-573 K. These achievements hold promising implications for advancing the viability of V-VI commercialized materials for low-medium temperature application.