A CdTe real time X-ray imaging sensor and system
A CdTe real time X-ray imaging sensor and system
复制标题
一种CdTe实时X射线成像传感器及系统
DOI：
10.1016/j.nima.2004.02.046
复制
发表时间：
2004
影响因子：
1.4
通讯作者：
T. Schulman
中科院分区：
文献类型：
--
作者：
K. Spartiotis;J. Havulinna;Anssi Leppanen;T. Pantsar;K. Puhakka;J. Pyyhtia;T. Schulman
一种实时 X 射线成像传感器由带有势垒型 In 前触点（阳极）和 Pt 像素触点（阴极）的 p 型 CdTe 像素探测器组成，现已开发并进行了测试。 5×5cm2 传感器区域覆盖有四个 CdTe 像素探测器，每个凸块都粘合到两个 CMOS 读出电路，并并排安装到支撑板上。每个CMOS具有127×253个像素，间距为100μm。传感器工作在电荷积分模式下。用户可选择高达 60fps 的数字视频帧输出速率。采用探测器偏置电压周期，以一定的时间间隔使电压瞬间为零，以消除偏振的影响。应用实时图像校准来补偿漏电流变化和 CMOS 失配。描述了 CdTe 像素化过程以及传感器的设计和操作。给出了 MTF、SNR 和 DQE 的实验结果，并显示了印刷电路板的 X 射线图像。
A real time X-ray imaging sensor consisting of p-type CdTe pixel detectors with barrier type In front contacts (anode) and Pt pixel contacts (cathode) has been developed and tested. The 5×5cm2sensor area is covered with four CdTe pixel detectors each bump bonded to two CMOS readout circuits and mounted side by side to a support board. Each CMOS has 127×253 pixels with a pitch of 100μm. The sensor is operated in the charge integration mode. User selective digital video frame output rates up to 60fps are possible. A detector bias voltage cycle which brings the voltage instantaneously to zero at a certain interval is applied to eliminate the effect of polarization. Real time image calibration is applied to compensate for leakage current variation and CMOS mismatch. The CdTe pixelization process and the sensor design and operation are described. Experimental results of the MTF, SNR and DQE are presented and X-ray images of printed circuit boards are shown.