Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy
Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy
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DOI：
10.1063/1.4936992
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发表时间：
2015-11-30
影响因子：
4
通讯作者：
Watanabe, Heiji
中科院分区：
文献类型：
--
作者：
Shimura, Takayoshi;Matsue, Masahiro;Watanabe, Heiji
我们研究了用横向液相外延方法制备的非掺杂和n型GeSn线的光学性质。Sn浓度在从籽晶到靠近线端的区域中为约0.5%。此外，Sn浓度在线端处增加到6%，而Si从晶种的扩散增强并延伸到距晶种200 lm。拉伸应变从种子附近的0.5%逐渐降低到丝端的0.25%。的光致发光（PL）峰红移Sn纳入到Ge线，并观察到在0.66 eV的PL峰从线端。在n型掺杂时，GeSn层的PL强度显著增强到比未掺杂的GeSn线的PL强度高约10倍。(C)2015年AIP Publishing LLC。
We investigated the optical properties of undoped and n-type GeSn wires fabricated by a lateral liquid-phase epitaxial method. The Sn concentration was approximately 0.5% in the region from the seed to near the wire end. Moreover, the Sn concentration increased to 6% at the wire end, whereas Si diffusion from the seed was enhanced and extended to 200 lm from the seed. Tensile strain gradually decreased from 0.5% close the seed to 0.25% at the wire end. The photoluminescence (PL) peak was red-shifted by Sn incorporation into the Ge wires, and a PL peak at 0.66 eV was observed from the wire end. Upon n-type doping, the PL intensity of the GeSn layers was significantly enhanced to approximately 10 times higher than that of the undoped GeSn wires. (C) 2015 AIP Publishing LLC.