Rail-to-Rail, Linear Hot-Electron Injection Programming of Floating-Gate Voltage Bias Generators at 13-Bit Resolution
Rail-to-Rail, Linear Hot-Electron Injection Programming of Floating-Gate Voltage Bias Generators at 13-Bit Resolution
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13 位分辨率浮栅偏压发生器的轨到轨线性热电子注入编程
DOI：
10.1109/jssc.2011.2167390
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发表时间：
2011
影响因子：
5.4
通讯作者：
S. Chakrabartty
中科院分区：
文献类型：
--
作者：
Chenling Huang;P. Sarkar;S. Chakrabartty
热电子注入广泛用于片上浮栅电压和电流基准的精确编程。传统的编程方法涉及基于通过使用测量数据估计的预测模型来调整喷射脉冲的持续时间和幅度。然而，改变脉冲宽度或幅度在注入过程中引入非线性，这使得建模、校准和编程过程复杂化。在本文中，我们提出了一种线性热电子注入技术，大大简化了编程过程，并可以实现编程精度大于13-B，这是有限的热噪声注入过程。该过程采用了一个有源反馈电路，它确保了所有的非线性因素影响的热电子注入过程保持恒定，从而实现了一个稳定和可控的注入速率。采用0.5 μm标准CMOS工艺制作的浮栅基准电压源阵列的测试结果表明，在可编程电压范围内，注入速率可控制在0.1 ~ 4.1V。使用50 ms的注入脉冲，我们表明，平均注入速率可以适应从6.9到250 μV/周期。
Hot-electron injection is widely used for accurate programming of on-chip floating-gate voltage and current references. The conventional programming approach involves adapting the duration and magnitude of the injection pulses based on a predictive model which is estimated by using measured data. However, varying the pulse-widths or amplitudes introduces nonlinearity in the injection process which complicates the modeling, calibration and programming procedure. In this paper, we propose a linear hot-electron injection technique which significantly simplifies the programming procedure, and can achieve programming accuracy greater than 13-b which is limited by the thermal noise from the injection process. The procedure employs an active feedback circuit which ensures that all the nonlinear factors affecting the hot-electron injection process are held constant, thus achieving a stable and controllable injection rate. Measured results using an array of floating-gate voltage reference prototyped in a 0.5-μm standard CMOS process demonstrate that the injection rates can be controlled from 0.1 to 4.1 V for the programmable voltage range. Using 50-ms injection pulses, we show that the average injection rate can be adapted from 6.9 to 250 μV/cycle.