Hetero-integration of β-Ga2O3 and Diamond substrates by hydrophilic bonding technique
Hetero-integration of β-Ga2O3 and Diamond substrates by hydrophilic bonding technique
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通过亲水键合技术异质集成 β-Ga2O3 和金刚石基底
DOI：
10.1149/09804.0017ecst
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Hideyuki Watanabe and Eiji Higurashi
中科院分区：
文献类型：
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作者：
Takashi Matsumae;Yuichi Kurashima;Hideki Takagi;Hitoshi Umezawa;Koji Tanaka;Toshimitsu Ito;Hideyuki Watanabe and Eiji Higurashi
在大气条件下，在250℃的温度下，在金刚石衬底上直接结合了β-Ga2O3膜。在键合前，β-Ga_2O_3表面用氧等离子体辐照活化，金刚石表面用H_2SO_4/H_2O_2和NH_3/H_2O_2混合物清洗。在大气条件下，β-Ga_2O_3和金刚石表面相互粘结。通过在250℃下对接触的样品进行热处理，它们形成了原子键，没有空洞、裂缝或严重的结晶度损害。认为β-Ga_2O_3与金刚石的直接键合有利于超宽带隙电力电子技术的实现。
A β-Ga2O3 film was directly bonded on a diamond substrate at 250 ºC under atmospheric conditions. Before bonding, the β-Ga2O3 surface was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3 and diamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250 ºC, they formed atomic bonds without voids, cracks, or severe crystallinity damages. It is believed that the direct bonding of β-Ga2O3 and diamond can facilitate the ultra-wide bandgap power electronics.