The interaction of proton irradiation with Zr textured microstructure
The interaction of proton irradiation with Zr textured microstructure
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DOI：
10.1016/j.jnucmat.2021.152808
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发表时间：
2021-04
影响因子：
3.1
通讯作者：
A. Adrych-Brunning;C. Race
中科院分区：
文献类型：
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作者：
A. Adrych-Brunning;C. Race
质子辐照通常在热反应堆结构材料（如锆合金）的实验研究中用作中子的替代物。质子束是单向的，这需要选择束相对于样品的方向。质子束的方向将决定质子将主要与什么样的晶格取向相互作用，特别是在具有强纹理的样品中。由于质子可以被引导，晶体的取向将影响能量沉积和注入范围。因此，我们研究了在强烈织构化的Zr样品中发现的晶体取向中的高能质子通道的程度。我们发现，低指数晶体方向附近的晶体取向，如< 1 1 2 <$0>带轴鼓励更高程度的质子通道相比，其他晶体取向中常见的分裂-基底织构样品。在这些方向上的排列可以改变质子40%的能量沉积。我们的研究结果表明，必须采取措施时，量化使用单一晶粒取向的纹理样品中的损伤。为了补偿沟道效应，在织构化样品中离子辐照的损伤应该通过对许多不同晶粒取向的损伤进行平均来量化，特别是当本体的辐照温度低于300 K时。
Proton irradiation is commonly used as a surrogate for neutrons in experimental studies of structural materials for thermal reactors, such as Zr alloys. The proton beam is unidirectional which requires a choice to be made about the direction of the beam relative to the sample. The direction of the proton beam will determine what lattice orientations the protons will predominantly interact with, particularly in a sample with a strong texture. Since protons can be channelled the orientation of the crystal will affect the energy deposition and the implantation range. We have therefore investigated the degree of high energy proton channelling in crystal orientations found in a strongly textured sample of Zr. We find that the crystal orientations near low-index crystal directions like the< 1 1 2¯ 0> zone axis encourage a higher degree of proton channelling compared with other crystal orientations commonly found in a split-basal textured sample. Channelling in these orientations can change the energy deposition of protons by 40%. Our results show that care must be taken when quantifying the damage in textured samples using a single grain orientation. To compensate for channelling effects, the damage from ion irradiation in a textured sample should be quantified by averaging the damage across many different grain orientations, especially when the irradiation temperature of the bulk is less than 300 K.